Effect of substrate removal on the optoelectronic properties of GaAs epitaxial layers and GaAs/AlGaAs vertical-cavity surface-emitting lasers

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 1, Issue 3, 2011, Pages 420-427

  Hiruma, Kenji ^a,b   Kinoshita, Masao ^a,c   Mikawa, Takashi ^a,d  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c NEC CORPORATION   (Japan)

^d Advanced Photonics Inc   (Japan)

Author keywords

Electron Hall mobility; GaAs epitaxial layer; photoluminescence; substrate removal; vertical cavity surface emitting laser

Indexed keywords

FAR-FIELD PATTERNS; GAAS; NEAR-FIELD PATTERN; OPTOELECTRONIC PACKAGING; OPTOELECTRONIC PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; SUBSTRATE REMOVAL; VERTICAL-CAVITY SURFACE EMITTING LASER;

ALUMINA; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ARSENIDE; HALL MOBILITY; MICROOPTICS; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SUBSTRATES; SURFACE EMITTING LASERS;

CHIP SCALE PACKAGES;

EID: 84876924708     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2010.2095270     Document Type: Article

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