SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 4, 2013, Pages 1148-1154

Tuning the p-type conductivity of ZnSe nanowires via silver doping for rectifying and photovoltaic device applications

(12) Wang, Li a Lu, Min a Wang, Xiangan a Yu, Yongqiang a Zhao, Xingzhi a Lv, Peng a Song, Hongwei a Zhang, Xiwei b Luo, Linbao a Wu, Chunyan a Zhang, Yan a Jie, Jiansheng b

a HEFEI UNIVERSITY OF TECHNOLOGY (China)

b SOOCHOW UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTOR (FETS); PHOTOVOLTAIC DEVICES; POWER CONVERSION EFFICIENCIES; SCHOTTKY BARRIER DIODES (SBDS); SEMICONDUCTOR NANOSTRUCTURES; THERMAL EVAPORATION METHOD; ZINC-BLENDE STRUCTURES;

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GRAPHENE; HETEROJUNCTIONS; NANOELECTRONICS; NANOWIRES; OPTOELECTRONIC DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; THERMAL EVAPORATION; TRANSPORT PROPERTIES;

PHOTOVOLTAIC EFFECTS;

EID: 84876550312 PISSN: 20507488 EISSN: 20507496 Source Type: Journal
DOI: 10.1039/c2ta00471b Document Type: Article

Times cited : (28)

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