Synthesis of p-type ZnSe nanowires by atmosphere compensating technique

Micro and Nano Letters

Volumn 6, Issue 6, 2011, Pages 459-462

  Li, Shanying ^a,b   Jiang, Yang ^a   Wang, Binbin ^a   Wu, Di ^a   Li, Junwei ^a   Zhang, Yugang ^a   Yang, Ben ^a   Ding, Xianan ^a   Zhou, Hongyang ^a   Zhong, Honghai ^a  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b HENAN UNIVERSITY OF URBAN CONSTRUCTION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPENSATING TECHNIQUES; COMPENSATION TECHNIQUES; DONOR-ACCEPTOR PAIR EMISSION; GROWTH DIRECTIONS; HIGH MOBILITY; P-TYPE; P-TYPE CONDUCTIVITY; PHOSPHORUS-DOPED; PHOTOLUMINESCENCE MEASUREMENTS; WURTZITE STRUCTURE; ZNSE NANOWIRES;

CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC PROPERTIES; PHOSPHORUS; SELENIUM; ZINC SULFIDE;

NANOWIRES;

NANOWIRE; PHOSPHORUS; SELENIUM; ZINC;

ARTICLE; ATMOSPHERE; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; CONCENTRATION (PARAMETERS); CONDUCTANCE; MEASUREMENT; MOLECULAR ELECTRONICS; NANOFABRICATION; PHOTOLUMINESCENCE; SEMICONDUCTOR; STRUCTURE ANALYSIS; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 84862907950     PISSN: None     EISSN: 17500443     Source Type: Journal    
DOI: 10.1049/mnl.2011.0219     Document Type: Article

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