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Volumn 98, Issue 12, 2011, Pages

Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity

(10) Peng, Qiang a Jie, Jiansheng a Xie, Chao a Wang, Li a Zhang, Xiwei a Wu, Di a Yu, Yongqiang a Wu, Chunyan a Wang, Zhi a Jiang, Peng a

a HEFEI UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING BLOCKES; DEVICE PERFORMANCE; IDEALITY FACTORS; NANORIBBONS; ORDERS OF MAGNITUDE; P-TYPE CONDUCTIVITY; P-TYPE DOPING; RECTIFICATION RATIO; SB DOPING; SB-DOPED; UV DETECTOR;

DIODES; DOPING (ADDITIVES); ZINC SULFIDE;

SCHOTTKY BARRIER DIODES;

EID: 79953896545 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3569590 Document Type: Article

Times cited : (35)

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