Metal-assisted homogeneous etching of single crystal silicon: A novel approach to obtain an ultra-thin silicon wafer

Applied Surface Science

Volumn 273, Issue , 2013, Pages 107-110

  Bai, Fan ^a,b   Li, Meicheng ^b   Song, Dandan ^b   Yu, Hang ^b   Jiang, Bing ^b   Li, Yingfeng ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b NORTH CHINA ELECTRIC POWER UNIVERSITY   (China)

Author keywords

Holes; Homogeneous etching; MACE; Thin silicon wafer

Indexed keywords

CHARGE INJECTION; ETCHING; SINGLE CRYSTALS; SURFACE ROUGHNESS;

ETCHING MECHANISM; HOLES; MACE; METAL-ASSISTED CHEMICAL ETCHING; SINGLE CRYSTAL SILICON; THIN SILICON WAFER; ULTRATHIN SILICON; UNIFORM DISTRIBUTION;

SILICON WAFERS;

EID: 84876411137     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.01.196     Document Type: Article

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