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Journal of Applied Physics

Volumn 113, Issue 14, 2013, Pages

The growth of high quality GaAsSb and type-II InGaAs/GaAsSb superlattice structure

(4) Miura, K a,b Iguchi, Y a Tsubokura, M a Kawamura, Y b

a SUMITOMO ELECTRIC INDUSTRIES LTD (Japan)

b Osaka Prefecture University (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; GROWTH CONDITIONS; HIGH QUALITY; OPTIMUM TEMPERATURE; OPTIMUM VALUE; PHOTOLUMINESCENCE MEASUREMENTS; SUPER-LATTICE STRUCTURES; VALANCE BANDS;

GROWTH TEMPERATURE; OPTICAL PROPERTIES; PHASE SEPARATION; X RAY DIFFRACTION;

SEMICONDUCTING GALLIUM;

EID: 84876362610 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4800834 Document Type: Article

Times cited : (15)

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