Low dark current SWIR photodiode with InGaAs/GaAsSb type II quantum wells grown on InP substrate

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2009, Pages 149-152

  Inada, H ^a   Miura, K ^a   Nagai, Y ^a   Tsubokura, M ^a   Moto, A ^b   Iguchi, Y ^c   Kawamura, Y ^c  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b Osaka Prefecture University   (Japan)

^c Innovation Core SEI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; INP SUBSTRATES; SHORT-WAVELENGTH INFRARED; SOLID SOURCE MOLECULAR BEAM EPITAXY; TYPE-II QUANTUM WELLS;

CRYSTAL GROWTH; INDIUM; INDIUM PHOSPHIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTODIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 70349508767     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2009.5012464     Document Type: Conference Paper

References (3)

1. M.Wada and H.Hosomatsu: Appl. Phys. Lett. 64, 1265 (1994).
2. A.Yamamoto, Y.Kawamura, H.Naito, and N.Inoue: J. Cryst. Growth. 201, 872 (1999).
3. R.Sidhu, N.Duan,J.Campbell, and A.Holmes: IEEE Photon. Technol. Lett. 17, 2715 (2005).