Growth optimization of GaAsSb lattice matched to InP by gas-source molecular-beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1641-1644

  Wu, Bing Ruey ^a   Xu, Chaofeng ^a   Chang, Kuo Lih ^a   Hsieh, Kuang Chien ^a   Cheng, K Y ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; DESORPTION TEMPERATURE; GROWTH TEMPERATURE;

COMPOSITION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHASE SEPARATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

SUPERLATTICES;

EID: 31144471225     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1978904     Document Type: Article

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