Optical properties of GaAs0.5Sb0.5 and In0.53Ga0.47As/GaAs0.5Sb0.5 type II single hetero-structures lattice-matched to InP substrates grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 872-876

  Yamamoto, A ^a   Kawamura, Y ^a   Naito, H ^a   Inoue, N ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; ENERGY GAP; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THERMAL EFFECTS;

SINGLE HETEROSTRUCTURES (SH);

MOLECULAR BEAM EPITAXY;

EID: 0032678546     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01478-X     Document Type: Article

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