Uncooled SWIR InGaAs/GaAsSb type II quantum well focal plane array

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7660, Issue , 2010, Pages

  Inada, H ^a   Miura, K ^a   Mori, H ^a   Nagai, Y ^a   Iguchi, Y ^a   Kawamura, Y ^b  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

focal plane array; InGaAs GaAsSb; quantum well; SWIR; type II

Indexed keywords

ABSORPTION LAYER; CAP LAYERS; CRYSTALLINE QUALITY; DISCRETE DEVICES; FLIP CHIP; HGCDTE; IMAGING APPLICATIONS; INDIUM BUMPS; INGAAS/GAASSB; INP; INP SUBSTRATES; LATTICE MATCHING; MATERIAL SYSTEMS; P-N JUNCTION; POWER CONSUMPTION; QUANTUM WELL; QUANTUM WELL STRUCTURES; ROOM TEMPERATURE; S-DOPED; SENSING SYSTEMS; SHORT-WAVELENGTH INFRARED; SOLID SOURCE MOLECULAR BEAM EPITAXY; STIRLING COOLERS; SWIR; TYPE II; TYPE-II QUANTUM WELLS; UNCOOLED;

ABSORPTION; DARK CURRENTS; FOCAL PLANE ARRAYS; FOCUSING; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SENSORS; SUBSTRATES; THERMOGRAPHY (IMAGING);

INFRARED RADIATION;

EID: 79953699074     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.850590     Document Type: Conference Paper

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