SWIR/MWIR InP-based p-i-n photodiodes with InGaAs/GaAsSb type-II quantum wells

IEEE Journal of Quantum Electronics

Volumn 47, Issue 9, 2011, Pages 1244-1250

  Chen, Baile ^a   Jiang, Weiyang ^a   Yuan, Jinrong ^a   Holmes Jr , Archie L ^a   Onat, Bora M ^b  

^a University of Virginia   (United States)

^b PRINCETON LIGHTWAVE INC   (United States)

Author keywords

Detectivity; GaAsSb; InGaAs; mid wavelength infrared; p i n photodiode; short wavelength infrared; type II multiple quantum wells

Indexed keywords

DETECTIVITY; GAASSB; INGAAS; MID-WAVELENGTH INFRARED; PIN PHOTODIODE; SHORT-WAVELENGTH INFRARED;

ABSORPTION; INFRARED RADIATION; PHOTODIODES; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80051860196     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2011.2160450     Document Type: Article

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