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Volumn 42, Issue 10, 2010, Pages 2781-2783
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Growth and characterization of strain-compensated InGaAs/GaAsSb type II multiple quantum wells on InP substrate
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Author keywords
GaAsSb; InP; Quantum wells; Type II
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Indexed keywords
COMPRESSIVE STRAIN;
CRYSTAL QUALITIES;
EMISSION WAVELENGTH;
ENERGY SHIFT;
GAASSB;
HIGH QUALITY;
INP;
INP SUBSTRATES;
LATTICE-MATCHED;
MULTIPLE QUANTUM WELLS;
OPTICAL AND ELECTRICAL PROPERTIES;
PEAK ENERGY;
PL INTENSITY;
QUANTUM WELL;
RED SHIFT;
STRAIN-COMPENSATED;
TYPE II;
WAVELENGTH REGIONS;
ELECTRIC PROPERTIES;
ELECTRON MOBILITY;
EPITAXIAL GROWTH;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
SEMICONDUCTING GALLIUM;
TENSILE STRAIN;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 77958011317
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2009.12.030 Document Type: Conference Paper |
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Times cited : (8)
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References (5)
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