Annealing effects on electrical properties of pure and tin-doped indium oxide thin films

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 12, 2012, Pages 9183-9186

  Kato, Kazuhiro ^a   Omoto, Hideo ^a   Yonekura, Masaaki ^a  

^a CENTRAL GLASS CO LTD   (Japan)

Author keywords

Annealing; Indium oxide; ITO; Sputtering; Thin film

Indexed keywords

ANNEALING TEMPERATURES; ATOMIC FORCE MICROSCOPE (AFM); INDIUM OXIDE; ITO; POST DEPOSITION ANNEALING; PULSED DC MAGNETRON SPUTTERING; TIN DOPED INDIUM OXIDE; X-RAY REFLECTIVITY MEASUREMENTS;

ANNEALING; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; DEPOSITS; ELECTRIC PROPERTIES; HALL MOBILITY; OXYGEN VACANCIES; SPUTTERING; THIN FILMS; TIN; X RAY DIFFRACTION;

VAPOR DEPOSITION;

EID: 84876216621     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.6757     Document Type: Article

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