Doping of TIPS-pentacene via Focused Ion Beam (FIB) exposure

Organic Electronics

Volumn 14, Issue 6, 2013, Pages 1570-1576

  Saive, Rebecca ^a,b,c   Mueller, Lars ^a,c   Mankel, Eric ^a,d   Kowalsky, Wolfgang ^a,b   Kroeger, Michael ^a,b  

^a INNOVATIONLAB   (Germany)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^c UNIVERSITY OF HEIDELBERG   (Germany)

^d DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Doping; Focused Ion Beam (FIB); Scanning Kelvin Probe Microscopy; TIPS pentacene; XPS

Indexed keywords

BINDING ENERGY; DOPING (ADDITIVES); EXCITONS; FOCUSED ION BEAMS; IONS; ORGANIC FIELD EFFECT TRANSISTORS; PROBES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

CONDUCTIVE PATHS; DEVICE CHARACTERISTICS; FIELD-EFFECT MOBILITIES; J-V CHARACTERISTICS; SCANNING KELVIN PROBE MICROSCOPY; SOLUTION PROCESSABLE; TIPS-PENTACENE; XPS MEASUREMENTS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84876170746     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2013.02.040     Document Type: Article

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