Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers

Journal of the American Chemical Society

Volumn 131, Issue 35, 2009, Pages 12530-12531

  Qi, Yabing ^a   Sajoto, Tissa ^b   Barlow, Stephen ^b   Kim, Eung Gun ^b   Brédas, Jean Luc ^b   Marder, Seth R ^b   Kahn, Antoine ^a  

^a Princeton University   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL EQUATIONS; DITHIOLENE; ENHANCED CONDUCTIVITY; GOOD STABILITY; HOLE TRANSPORT LAYERS; HOLE TRANSPORT MATERIALS; HOST MATRICES; INVERSE PHOTOEMISSION SPECTROSCOPY; MOLECULAR SEMICONDUCTORS; ORGANOMETALLIC COMPLEX; P-DOPING; PINNING POTENTIAL; RUTHERFORD BACK-SCATTERING; THEORETICAL RESULT; TRIFLUOROMETHYL;

CHEMICAL REACTIONS; ELECTRON AFFINITY; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ETHANE; MOLYBDENUM; ORGANOMETALLICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING;

MOLYBDENUM COMPOUNDS;

FLUORIDE; ORGANOMETALLIC COMPOUND; TRIS[1,2 BIS(TRIFLUOROMETHYL) ETHANE 1,2 DITHIOLENE]; UNCLASSIFIED DRUG;

ARTICLE; BINDING AFFINITY; CONDUCTANCE; DIFFUSION; ELECTRON; ELECTRONICS; MOLECULE; SEMICONDUCTOR; SPECTROSCOPY; THREE DIMENSIONAL IMAGING;

EID: 69849104106     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja904939g     Document Type: Article

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