Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Hosoi, Takuji ^a   Azumo, Shuji ^b   Kashiwagi, Yusaku ^b   Hosaka, Shigetoshi ^b   Nakamura, Ryota ^c   Mitani, Shuhei ^c   Nakano, Yuki ^c   Asahara, Hirokazu ^c   Nakamura, Takashi ^c   Kimoto, Tsunenobu ^d   Shimura, Takayoshi ^a   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

^c ROHM CO LTD   (Japan)

^d KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; ELECTRICAL CHARACTERIZATION; HIGH-K GATE DIELECTRICS; MOSFETS; NITROGEN CONTENT; PERFORMANCE AND RELIABILITIES; POWER MOSFETS; THICKNESS RATIO;

DIELECTRIC DEVICES; ELECTRON DEVICES; GATE DIELECTRICS; SILICON CARBIDE;

MOSFET DEVICES;

EID: 84876123499     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6478998     Document Type: Conference Paper

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