C-V measurements of single vertical nanowire capacitors

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 119-120

  Mensch, P ^a   Moselund, K E ^a   Karg, S ^a   Lortscher, E ^a   Bjork, M T ^a   Schmid, H ^a   Riel, H ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

C-V MEASUREMENT; CRYSTALLOGRAPHIC ORIENTATIONS; DENSITY OF INTERFACE STATE; DEVICE PERFORMANCE; INVERSE SUBTHRESHOLD SLOPES; LATERAL DEVICE; NANOWIRE DEVICES; VERTICAL NANOWIRES;

CAPACITANCE MEASUREMENT; DIELECTRIC DEVICES; GERMANIUM; NANOWIRES; SEMICONDUCTING SILICON;

MOS CAPACITORS;

EID: 84874854570     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994444     Document Type: Conference Paper

References (6)

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5. S. Roddaro et al. Applied Physics Letters, 2008, 92, 253509
6. K. E. Moselund et al. Nanotechnology, 2010, 21, 435202