Ultra-shallow junctions formed using microwave annealing

Applied Physics Letters

Volumn 102, Issue 12, 2013, Pages

  Xu, Peng ^a   Fu, Chaochao ^a   Hu, Cheng ^a   Wei Zhang, David ^a   Wu, Dongping ^a   Luo, Jun ^b   Zhao, Chao ^b   Zhang, Zhi Bin ^c   Zhang, Shi Li ^c  

^a FUDAN UNIVERSITY   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

^c UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION PROCESS; AMORPHOUS SI; DOPANT IMPLANTATION; ELECTRICAL ACTIVATION; IMPLANTED DOPANTS; LOW THERMAL BUDGET; MICROWAVE ANNEALING; ULTRA SHALLOW JUNCTION;

AMORPHOUS SILICON; GERMANIUM;

MICROWAVE HEATING;

EID: 84875965707     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4799030     Document Type: Article

References (25)

1. P. Kalra, Advanced source drain technologies for nanoscale CMOS., Ph.D. dissertation (University of California, Berkeley, 2008).
2. C. Ortolland, E. Rosseel, N. Horiguchi, C. Kerner, S. Mertens, J. Kittl, E. Verleysen, H. Bender, W. Vandervost, A. Lauwers, P. P. Absil, S. Biesemans, S. Muthukrishnan, S. Srinivasan, A. J. Mayur, R. Schreutelkamp, and T. Hoffmann, in International Electron Devices Meeting, Baltimore, America, 7-9 December 2009, p. 23.
3. P. Vandenabeele and K. Maex, J. Appl. Phys. 72, 5867 (1992). 10.1063/1.351892
4. A. Shima, Y. Wang, S. Talwar, and A. Hiraiwa, Tech. Dig. VLSI Technol. 2004, 174-175.
5. L. M. Feng, Y. Wang, and D. A. Markle, Proc. Int. Workshop Junction Technol. 2006, 25-30.
6. R. Buchta, S. L. Zhang, D. Sigurd, and K. Lindgren, Appl. Phys. Lett. 62, 3153 (1993). 10.1063/1.109112
7. J. M. Kowalski and J. E. Kowalski, in Proceedings of 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors (RTP), Catania, Italy, 2-5 October 2007, pp. 51-56.
8. F. K. Hsueh, Y. J. Lee, K. L. Lin, M. I. Current, C. Y. Wu, and T. S. Chao, IEEE Electron Device Lett. 58, 2088 (2011). 10.1109/TED.2011.2132801
9. T. L. Alford, D. C. Thompson, J. W. Mayer, and N. D. Theodore, J. Appl. Phys. 106, 114902 (2009). 10.1063/1.3260245
10. T. Yamaguchi, Y. Kawasaki, T. Yamashita, Y. Yamamoto, Y. Goto, J. Tsuchimoto, S. Kudo, K. Maekawa, M. Fujisawa, and K. Asai, in International Electron Devices Meeting, San Francisco, America, 6-8 December 2010, pp. 576-579.
11. C. Hu, P. Xu, C. Fu, Z. Zhu, X. Gao, A. Jamshidi, M. Noroozi, H. Radamson, D. Wu, and S. L. Zhang, Appl. Phys. Lett. 101, 092101 (2012). 10.1063/1.4748111
12. Y. J. Lee, S. S. Chuang, C. I. Liu, F. K. Hsueh, P. J. Sung, H. C. Chen, C. T. Wu, K. L. Lin, J. Y. Yao, Y. L. Shen, M. L. Kuo, C. H. Yang, G. L. Luo, H. W. Chen, C. H. Lai, M. I. Current, C. Y. Wu, Y. M. Wan, T. Y. Tseng, C. Hu, and F. L. Yang, in International Electron Devices Meeting, San Francisco, America, 10-13 December 2012, pp. 514-516.
13. S. C. Fong, C. Y. Wang, T. H. Chang, and T. S. Chin, Appl. Phys. Lett. 94, 102104 (2009). 10.1063/1.3097019
14. R. N. P. Vemuri, M. J. Gadre, D. Theodore, W. Chen, S. S. Lau, and T. L. Alford, J. Appl. Phys. 110, 034907 (2011). 10.1063/1.3622287
15. J. D. Plummer, M. D. Deal, and P. B. Griffin, Silicon VLSI Technology Fundamentals, Practice and Modeling (Prentice Hall, NJ, USA, 2000).
16. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989). 10.1103/RevModPhys.61.289
17. E. T. Thostenson and T. W. Chou, Composites, Part A 30, 1055 (1999). 10.1016/S1359-835X(99)00020-2
18. D. M. Pozar, Microwave Engineering (Wiley, NY, USA, 1998).
19. J. F. Ziegler, Handbook of Ion Implantation Technology (North-Holland, Amsterdam, 1992), pp. 92-93.
20. T. E. Seidel, IEEE Electron Device Lett. 4, 353 (1983). 10.1109/EDL.1983.25760
21. S. S. Lau, J. Vac. Sci. Technol. 15, 1656 (1978). 10.1116/1.569824
22. C. W. Nieh and L. J. Chen, J. Appl. Phys. 63, 575 (1988). 10.1063/1.340091
23. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era Volume 1 - Process Technology (Lattice Press, CA, USA, 1986), pp. 295-308.
24. K. S. Jones and D. Venables, J. Appl. Phys. 69, 2931 (1991). 10.1063/1.348603
25. J. Huang, D. Fan, and R. J. Jaccodine, J. Appl. Phys. 63, 5521 (1988). 10.1063/1.340328