Excimer laser doping techniques for II-VI semiconductors

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 462-467

  Hatanaka, Y ^a   Niraula, M ^a   Nakamura, A ^a   Aoki, T ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

CdTe; Doping technology; Excimer laser annealing; II VI compound semiconductor; Laser processing; ZnO; ZnSe

Indexed keywords

ANNEALING; ANTIMONY; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON MOBILITY; EXCIMER LASERS; OHMIC CONTACTS; PHOSPHORUS; POTASSIUM; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DIODES; SODIUM; ZINC OXIDE;

EXCIMER LASER ANNEALING; EXCIMER LASER DOPING; ZINC SELENIDE;

SEMICONDUCTOR DOPING;

EID: 18244417949     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00117-9     Document Type: Article

References (19)

1. Marfaing Y. Prog. Cryst. Growth Charact. 4:1981;317.
2. Vodakov Yu.A., Lamakina G.A., Naumov G.P., Maslakovets Yu.P. Sov. Phys. Solid. State. 2:1960;1.
3. Vodakov Yu.A., Lamakina G.A., Naumov G.P., Maslakovets Yu.P. Sov. Phys. Solid. State. 2:1960;11.
4. Morehead F.F. J. Appl. Phys. 37:1966;3487.
5. Gu J., Kitahara T., Fujita S., Sakaguchi T. Jpn. J. Appl. Phys. 14:1975;499.
6. Kato H., Takayanagi S. Jpn. J. Appl. Phys. 2:1963;250.
7. Donnelly J.P., Foyt A.G., Hinkley E.D., Lindley W.T., Dimmock J.O. Appl. Phys. Lett. 12:1968;303.
8. Agrinskaya N.V., Arkad'eva E.N., Guseva M.I., Maslova L.V., Matveen O.A., Ryvkin S.M., Sladkova V.A., Starinin K.V. Sov. Phys. Semicond. 6:1972;407.
9. Wood R.F., Giles G.E. Phys. Rev. B. 23:1981;2923.
10. Sameshima T., Usui S., Sekiya M. IEEE Electron Device Lett. EDL7:1986;276.
11. Deutsh T.F., Fan J.C.C., Turner G.W., Chapman R.L., Ehlich D.J., Osgood R.M. Jr. Appl. Phys. Lett. 38:1981;144.
12. Sameshima T., Usui S., Sekiya M. J. Appl. Phys. 62:1987;711.
13. Neumark G.F., Padmapani N.C. Mater. Sci. Eng. B45:1997;213.
14. Hatanaka Y., Aoki T., Arakawa T., Noda D., Nakanishi Y. J. Cryst. Growth. 184/185:1998;425.
15. Aoki T., Hatanaka Y., Look D.C. Appl. Phys. Lett. 76:2000;3257.
16. Hatanaka Y., Niraula M., Aoki Y., Aoki T., Nakanishi Y. Appl. Surf. Sci. 142:1999;227.
17. Mochizuki D., Niraula M., Aoki T., Tomita Y., Nihashi T., Hatanaka Y. Nucl. Inst. Methods. A436:1999;127.
18. Niraula M., Mochizuki D., Aoki T., Hatanaka Y. Appl. Phys. Lett. 75:1999;2322.
19. Acrorado, Acrorado Co. 13-23, Sizaki Gushikawa-shi, Okinawa 904-2234, Japan.