Tunable resistive switching behaviour in ferroelectric-ZnO bilayer films

Journal of Physics D: Applied Physics

Volumn 46, Issue 16, 2013, Pages

  Zhou, Ming Xiu ^a   Li, Zi Wei ^a   Chen, Bo ^a   Wan, Jian Guo ^a   Liu, Jun Ming ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTION; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; POLARIZATION COUPLING; RECTIFICATION RATIO; RESISTANCE RATIO; RESISTIVE SWITCHING; STRONG DEPENDENCES;

BAND STRUCTURE; FERROELECTRICITY; HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAD; MAGNETIC FILMS; POLARIZATION; SOL-GEL PROCESS; SWITCHING SYSTEMS;

ZINC OXIDE;

EID: 84875838307     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/16/165304     Document Type: Article

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