A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Kaneko, Yukihiro ^a,b   Nishitani, Yu ^a   Ueda, Michihito ^a   Tokumitsu, Eisuke ^b   Fujii, Eiji ^a  

^a PANASONIC CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; CHANNEL LENGTH; FAST SWITCHING; GATE VOLTAGES; MULTILEVEL PROGRAMMING; ON/OFF RATIO; PB(ZR , TI)O; PULSE WIDTH; RETENTION PROPERTIES; THREE ORDERS OF MAGNITUDE; THREE-LEVEL; ZNO;

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRIC PROPERTIES; FERROELECTRIC FILMS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; LEAD; OXIDE FILMS; THIN FILM TRANSISTORS; ZINC OXIDE; ZIRCONIUM;

TRANSISTORS;

EID: 80855137045     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3657413     Document Type: Article

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