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Volumn 15, Issue 9, 2013, Pages 1680-1684

Epitaxial growth of heavily boron-doped Si by Al(B)-induced crystallisation at low temperature for back surface field manufacturing

(9) Wei, Sung Yen a Lin, Hung Hsi a Yu, Sheng Min b Hsieh, Chien Kuo c Tsai, Shuo Cheng a Sun, Wen Ching b Lin, Tzer Shen b Tsai, Chuen Horng a Chen, Fu Rong a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

c MING CHI UNIVERSITY OF TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84875797519 PISSN: None EISSN: 14668033 Source Type: Journal
DOI: 10.1039/c2ce26563j Document Type: Article

Times cited : (11)

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