Diffusion-controlled formation mechanism of dual-phase structure during Al induced crystallization of SiGe

Applied Physics Letters

Volumn 100, Issue 7, 2012, Pages

  Zhang, Tian Wei ^a   Ma, Fei ^a,b   Zhang, Wei Lin ^a   Ma, Da Yan ^a   Xu, Ke Wei ^a,c   Chu, Paul K ^b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c XI'AN UNIVERSITY OF ARTS AND SCIENCE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-INDUCED CRYSTALLIZATION; ANNEALING TEMPERATURES; CRITICAL VALUE; DIFFUSION RATE; FORMATION MECHANISM; HIGH-EFFICIENCY SOLAR CELLS; INDUCED CRYSTALLIZATION; LOW TEMPERATURES; MODEL-BASED OPC; OXIDIZATION; STACKED STRUCTURE; TEMPERATURE DEPENDENT BEHAVIOR;

GERMANIUM;

SILICON ALLOYS;

EID: 84863170583     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3685712     Document Type: Article

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