On the mechanisms governing aluminum-mediated solid-phase epitaxy of silicon

Journal of Electronic Materials

Volumn 38, Issue 10, 2009, Pages 2052-2062

  Civale, Yann ^a   Vastola, Guglielmo ^b   Nanver, Lis K ^a   Mary Joy, Rani ^a   Kim, Jae Ryoung ^c  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Aluminum doping; Aluminum induced crystallization; Layer exchange mechanisms; Low temperature doping; P + n diodes; Silicon crystal growth; Silicon epitaxy; Solid phase epitaxy

Indexed keywords

ALUMINUM-INDUCED CRYSTALLIZATION; LAYER EXCHANGE MECHANISMS; LOW-TEMPERATURE DOPING; P +-N DIODES; SILICON CRYSTAL GROWTH; SILICON EPITAXY; SOLID-PHASE EPITAXY;

ALUMINA; ALUMINUM; AMORPHOUS SILICON; CRYSTAL GROWTH; CRYSTALLIZATION; EPITAXIAL GROWTH; GRAIN BOUNDARIES; GRAIN GROWTH; MOLECULAR BEAM EPITAXY; PHASE INTERFACES; SUBSTRATES; SURFACE DIFFUSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 69049111671     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0877-1     Document Type: Article

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