Metal-catalyzed growth of semiconductor nanostructures without solubility and diffusivity constraints

Advanced Materials

Volumn 23, Issue 7, 2011, Pages 854-859

  Wang, Zumin ^a   Gu, Lin ^a   Phillipp, Fritz ^a,c   Wang, Jiang Y ^a,d   Jeurgens, Lars P H ^a   Mittemeijer, Eric J ^a,b  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c TOHOKU UNIVERSITY   (Japan)

^d SHANTOU UNIVERSITY   (China)

Author keywords

catalytic growth; flexible electronics; growth mechanisms; nanostructures; nanowires

Indexed keywords

ATOMIC SCALE; CATALYTIC GROWTH; CRYSTALLINE SI; DIFFUSIVITIES; GROWTH MECHANISMS; IN-SITU HEATING; METAL CATALYST; SEMICONDUCTOR NANOSTRUCTURES;

CATALYSIS; CATALYSTS; FLEXIBLE ELECTRONICS; NANOWIRES; SOLUBILITY;

SEMICONDUCTOR GROWTH;

ALUMINUM; NANOMATERIAL; SILICON;

ARTICLE; CATALYSIS; CHEMISTRY; DIFFUSION; SEMICONDUCTOR; SOLUBILITY; TEMPERATURE;

ALUMINUM; CATALYSIS; DIFFUSION; NANOSTRUCTURES; SEMICONDUCTORS; SILICON; SOLUBILITY; TEMPERATURE;

EID: 79951735716     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201002997     Document Type: Article

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