Some mechanisms for the incorporation of hydrogen in Hf-based gate dielectric films on Si

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 4, 2007, Pages 945-950

  Driemeier, C ^a   Baumvol, I J R ^a,b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

HFO2; INTERFACIAL REGION; NUCLEAR REACTION ANALYSES; SIO2;

ANNEALING; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HAFNIUM; SEMICONDUCTOR MATERIALS; SILICON; WATER VAPOR; X RAY PHOTOELECTRON SPECTROSCOPY;

HYDROGEN;

EID: 34547233766     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200675203     Document Type: Conference Paper

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