-
1
-
-
19744374735
-
Solid-state light sources getting smart
-
DOI 10.1126/science.1108712
-
E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science, vol. 308, no. 5726, pp. 1274-1278, 2005. (Pubitemid 40746117)
-
(2005)
Science
, vol.308
, Issue.5726
, pp. 1274-1278
-
-
Schubert, E.F.1
Kim, J.K.2
-
2
-
-
79959861723
-
Patterned structure of remote phosphor for phosphor-converted white LEDs
-
H. C. Kuo, C. W. Hung, H. C. Chen, K. J. Chen, C. H. Wang, C.W. Sher, C. C. Yeh, C. C. Lin, C. H. Chen, and Y. J. Cheng, "Patterned structure of remote phosphor for phosphor-converted white LEDs," Opt. Express, vol. 19, no. 14, pp. A930-A936, 2011.
-
(2011)
Opt. Express
, vol.19
, Issue.14
-
-
Kuo, H.C.1
Hung, C.W.2
Chen, H.C.3
Chen, K.J.4
Wang, C.H.5
Sher, C.W.6
Yeh, C.C.7
Lin, C.C.8
Chen, C.H.9
Cheng, Y.J.10
-
3
-
-
84863028653
-
GaN-based light-emitting diode with sputtered AlN nucleation layer
-
Apr.
-
C. H. Yen, W. C. Lai, Y. Y. Yang, C. K.Wang, T. K. Ko, S. J. Hon, and S. J. Chang, "GaN-based light-emitting diode with sputtered AlN nucleation layer," IEEE Photon. Technol. Lett., vol. 24, no. 4, pp. 294-296, Apr. 2012.
-
(2012)
IEEE Photon. Technol. Lett
, vol.24
, Issue.4
, pp. 294-296
-
-
Yen, C.H.1
Lai, W.C.2
Yang, Y.Y.3
Wang, C.K.4
Ko, T.K.5
Hon, S.J.6
Chang, S.J.7
-
4
-
-
79960896057
-
Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes
-
Aug.
-
C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C.Wang, and G. C. Chi, "Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes," IEEE Electron Devices Lett., vol. 32, no. 8, pp. 1098-1100, Aug. 2011.
-
(2011)
IEEE Electron Devices Lett
, vol.32
, Issue.8
, pp. 1098-1100
-
-
Wang, C.H.1
Lin, D.W.2
Lee, C.Y.3
Tsai, M.A.4
Chen, G.L.5
Kuo, H.T.6
Hsu, W.H.7
Kuo, H.C.8
Lu, T.C.9
Wang, S.C.10
Chi, G.C.11
-
5
-
-
58149526270
-
Effect of phosphor geometry on the luminous efficiency of high-power white light-emitting diodes with excellent color rendering property
-
Y. H. Won, H. S. Jang, K. W. Cho, Y. S. Song, D. Y. Leon, and H. K. Kwon, "Effect of phosphor geometry on the luminous efficiency of high-power white light-emitting diodes with excellent color rendering property," Opt. Lett., vol. 34, no. 1, pp. 1-3, 2009.
-
(2009)
Opt. Lett
, vol.34
, Issue.1
, pp. 1-3
-
-
Won, Y.H.1
Jang, H.S.2
Cho, K.W.3
Song, Y.S.4
Leon, D.Y.5
Kwon, H.K.6
-
6
-
-
43949095671
-
Phosphor thermometry in white light-emitting diodes
-
Feb./Mar
-
P. Vitta, P. Pobedinskas, and A. Zukauskas, "Phosphor thermometry in white light-emitting diodes," IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 399-401, Feb./Mar. 2007.
-
(2007)
IEEE Photon. Technol. Lett
, vol.19
, Issue.5
, pp. 399-401
-
-
Vitta, P.1
Pobedinskas, P.2
Zukauskas, A.3
-
7
-
-
77956612306
-
Energy-efficient, high-color-rendering LED lamps using oxyfluoride and fluoride phosphors
-
A. A. Setlur, E. V. Radkov, C. S. Henderson, J.-H. Her, A.M. Srivastava, N. Karkada, M. S. Kishore, N. P. Kumar, D. Aesram, A. Deshpande, B. Kolodin, L. S. Grigorov, and U. Happek, "Energy-efficient, high-color-rendering LED lamps using oxyfluoride and fluoride phosphors," Chem. Mater., vol. 22, no. 13, pp. 4076-4082, 2010.
-
(2010)
Chem. Mater
, vol.22
, Issue.13
, pp. 4076-4082
-
-
Setlur, A.A.1
Radkov, E.V.2
Henderson, C.S.3
Her, J.-H.4
Srivastava, A.M.5
Karkada, N.6
Kishore, M.S.7
Kumar, N.P.8
Aesram, D.9
Deshpande, A.10
Kolodin, B.11
Grigorov, L.S.12
Happek, U.13
-
8
-
-
73849131863
-
Superior illuminant characteristics of color rendering and luminous efficacy in multilayered phosphor conversion white light sources excited by near-ultraviolet light-emitting diodes
-
T. Fukui, K. Kamon, J. Takeshita, H. Hayashi, T. Miyachi, Y. Uchida, S. Kurai, and T. Taguchi, "Superior illuminant characteristics of color rendering and luminous efficacy in multilayered phosphor conversion white light sources excited by near-ultraviolet light-emitting diodes," Jpn. J. Appl. Phys., vol. 48, no. 11, p. 112101, 2009.
-
(2009)
Jpn. J. Appl. Phys
, vol.48
, Issue.11
, pp. 112101
-
-
Fukui, T.1
Kamon, K.2
Takeshita, J.3
Hayashi, H.4
Miyachi, T.5
Uchida, Y.6
Kurai, S.7
Taguchi, T.8
-
9
-
-
59349101064
-
Characteristics of single-chip GaN-based alternating current light-emitting diode
-
H. H. Yen, H. C. Kuo, andW. Y. Yeh, "Characteristics of single-chip GaN-based alternating current light-emitting diode," Jpn. J. Appl. Phys., vol. 47, pp. 8808-8810, 2008.
-
(2008)
Jpn. J. Appl. Phys
, vol.47
, pp. 8808-8810
-
-
Yen, H.H.1
Kuo Andw. Y Yeh, H.C.2
-
10
-
-
78649232424
-
Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells
-
C. H. Wang, S. P. Chang, W. T. Chang, J. C. Li, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, "Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells," Appl. Phys. Lett., vol. 97, no. 18, p. 181101, 2010.
-
(2010)
Appl. Phys. Lett
, vol.97
, Issue.18
, pp. 181101
-
-
Wang, C.H.1
Chang, S.P.2
Chang, W.T.3
Li, J.C.4
Lu, Y.S.5
Li, Z.Y.6
Yang, H.C.7
Kuo, H.C.8
Lu, T.C.9
Wang, S.C.10
-
11
-
-
67049171363
-
Auger recombination rates in nitrides from first principles
-
Art 191109
-
K. T. Delaney, P. Rinke, and C.G. Van deWalle, "Auger recombination rates in nitrides from first principles," Appl. Phys. Lett., vol. 94, no. 19, 2009, Art. 191109.
-
(2009)
Appl. Phys. Lett
, vol.94
, Issue.19
-
-
Delaney, K.T.1
Rinke, P.2
Van Dewalle, C.G.3
-
12
-
-
35648977539
-
Origin of efficiency droop in GaN-based light-emitting diodes
-
M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efficiency droop in GaN-based light-emitting diodes," Appl. Phys. Lett., vol. 91, no. 18, p. 183507, 2007.
-
(2007)
Appl. Phys. Lett
, vol.91
, Issue.18
, pp. 183507
-
-
Kim, M.H.1
Schubert, M.F.2
Dai, Q.3
Kim, J.K.4
Schubert, E.F.5
Piprek, J.6
Park, Y.7
-
13
-
-
77955415098
-
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
-
H. Zhao, G. Liu, R. A. Arif, and N. Tansu, "Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes," Solid-State Electron., vol. 54, no. 10, pp. 1119-1124, 2010.
-
(2010)
Solid-State Electron
, vol.54
, Issue.10
, pp. 1119-1124
-
-
Zhao, H.1
Liu, G.2
Arif, R.A.3
Tansu, N.4
-
14
-
-
84856083856
-
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
-
R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Tech., vol. 27, no. 2, p. 024001, 2012.
-
(2012)
Semicond. Sci. Tech
, vol.27
, Issue.2
, pp. 024001
-
-
Farrell, R.M.1
Young, E.C.2
Wu, F.3
Denbaars, S.P.4
Speck, J.S.5
-
15
-
-
79959907003
-
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
-
H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Express, vol. 19, no. 14, pp. A991-A1007, 2011.
-
(2011)
Opt. Express
, vol.19
, Issue.14
-
-
Zhao, H.P.1
Liu, G.Y.2
Zhang, J.3
Poplawsky, J.D.4
Dierolf, V.5
Tansu, N.6
-
16
-
-
84857298604
-
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
-
Art 113110
-
J. Zhang and N. Tansu, "Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes," J. Appl. Phys., vol. 110, no. 11, 2011, Art. 113110.
-
(2011)
J. Appl. Phys
, vol.110
, Issue.11
-
-
Zhang, J.1
Tansu, N.2
-
17
-
-
84859986056
-
Efficiency droop in AlGaInP and GaInN light-emitting diodes
-
J. I. Shim, D. P. Han, H. Kim,D. S. Shin, G. B. Lin, D. S. Meyaard, Q. Shan, J. Cho, E. F. Schubert, H. Shim, and C. Sone, "Efficiency droop in AlGaInP and GaInN light-emitting diodes," Appl. Phys. Lett., vol. 100, no. 1, p. 111106, 2012.
-
(2012)
Appl. Phys. Lett
, vol.100
, Issue.1
, pp. 111106
-
-
Shim, J.I.1
Han, D.P.2
Kimd. S Shin, H.3
Lin, G.B.4
Meyaard, D.S.5
Shan, Q.6
Cho, J.7
Schubert, E.F.8
Shim, H.9
Sone, C.10
-
18
-
-
73549112195
-
A photometric investigation of ultra-efficient LEDs with high color rendering index and high luminous efficacy employing nanocrystal quantum dot luminophores
-
T. Erdem, S. Nizamoglu, X.W. Sun, and H. V. Demir, "A photometric investigation of ultra-efficient LEDs with high color rendering index and high luminous efficacy employing nanocrystal quantum dot luminophores," Opt. Express, vol. 18, no. 1, pp. 340-347, 2010.
-
(2010)
Opt. Express
, vol.18
, Issue.1
, pp. 340-347
-
-
Erdem, T.1
Nizamoglu, S.2
Sun, X.W.3
Demir, H.V.4
|