Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1098-1100

  Wang, C H ^a   Lin, D W ^a   Lee, C Y ^a   Tsai, M A ^a   Chen, G L ^a   Kuo, H T ^a   Hsu, W H ^a   Kuo, H C ^a   Lu, T C ^a   Wang, S C ^a   Chi, G C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Current spreading; efficiency droop; high voltage; light emitting diodes

Indexed keywords

CURRENT SPREADING; ELECTRICAL CHARACTERISTIC; FORWARD VOLTAGE; HIGH VOLTAGE; HIGH-VOLTAGES; LIGHT OUTPUT; LUMINOUS EFFICIENCY; SERIES RESISTANCES; SIMULATION RESULT; WALLPLUG EFFICIENCY;

DIODES; EFFICIENCY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; MICROPROCESSOR CHIPS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79960896057     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2153176     Document Type: Article

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