Characteristics of single-chip GaN-based alternating current light-emitting diode

Japanese Journal of Applied Physics

Volumn 47, Issue 12, 2008, Pages 8808-8810

  Yen, Hsi Hsuan ^a   Kuo, Hao Chung ^a   Yeh, Wen Yung ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Alternating current; GaN; Light emitting diode; Wheatstone bridge

Indexed keywords

BRIDGE CIRCUITS; CURRENT DENSITY; DIODES; ELECTRIC CONVERTERS; ENERGY UTILIZATION; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; LIGHT EMISSION; LITHIUM BATTERIES; ORGANIC LIGHT EMITTING DIODES (OLED); RESISTORS; SEMICONDUCTING GALLIUM;

ALTERNATING CURRENT; BLUE SHIFTS; ENERGY UTILIZATION EFFICIENCIES; GAN; HEAT ACCUMULATIONS; INPUT POWER; LIGHT OUTPUTS; LIGHT-EMITTING DIODE; SINGLE CHIPS; WHEATSTONE BRIDGE;

LIGHT EMITTING DIODES;

EID: 59349101064     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8808     Document Type: Article

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