SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 16, Issue 2, 2013, Pages 337-343

Physical properties of nanocrystalline CuO thin films prepared by the SILAR method

(2) Mageshwari, K a Sathyamoorthy, R a

a KONGUNADU ARTS AND SCIENCE COLLEGE (India)

Author keywords

CuO; Luminescence; Raman; SILAR; Thin films; X ray diffraction

Indexed keywords

CUO; MONOCLINIC CRYSTAL STRUCTURE; NEAR BAND EDGE EMISSIONS; RAMAN; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SILAR; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; X-RAY DIFFRACTION STUDIES;

FOURIER TRANSFORM INFRARED SPECTROSCOPY; LUMINESCENCE; PHYSICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

DEPOSITION;

EID: 84875223911 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2012.09.016 Document Type: Article

Times cited : (155)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.