Annealing and light effect on structural, optical and electrical properties of CuS, CuZnS and ZnS thin films grown by the SILAR method

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 8, 2009, Pages 1365-1372

  Ali Yildirim, M ^a   Ateş, Aytunç ^b   Astam, Aykut ^b  

^a ERZINCAN UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Annealing and light effect; Cu0.6Zn0.4S; CuS; Optical properties; SILAR; Thin film; ZnS

Indexed keywords

ABSORPTION MEASUREMENTS; ANNEALING TEMPERATURE EFFECTS; AS-GROWN FILMS; BAND GAP ENERGY; CU0.6ZN0.4S; CURRENT INCREASE; CUS; ELECTRICAL PROPERTY; GLASS SUBSTRATES; LIGHT EFFECTS; LIGHT INTENSITY; OPTICAL AND ELECTRICAL PROPERTIES; POLYCRYSTALLINE; PROBE METHODS; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPES; SEM; SILAR; SILAR METHOD; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; TWO-POINT; XRD STUDIES; ZNS; ZNS THIN FILMS;

ADSORPTION; ANNEALING; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ENERGY GAP; GLASS; LIGHT; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC SULFIDE;

THERMAL EFFECTS;

EID: 67649213538     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.04.014     Document Type: Review

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