Modeling the impact of junction angles in tunnel field-effect transistors

Solid-State Electronics

Volumn 69, Issue , 2012, Pages 31-37

  Kao, Kuo Hsing ^a,b   Verhulst, Anne S ^a   Vandenberghe, William G ^a,b   Sorée, Bart ^a,c   Groeseneken, Guido ^a,b   Meyer, Kristin De ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

Band to band tunneling; Junction angle; Modeling; Tunnel field effect transistor; Tunnel path

Indexed keywords

AMBIPOLAR; ANALYTICAL MODEL; ANGLE DEPENDENCE; BAND TO BAND TUNNELING; BANDGAP MATERIALS; CIRCULAR TUNNELS; CLASSICAL PARTICLE; DEVICE SIMULATIONS; EFFECTIVE OXIDE THICKNESS; FRINGING FIELDS; GATE ELECTRODES; INNATE IMMUNITY; JUNCTION ANGLE; SOURCE JUNCTIONS; SUBTHRESHOLD SWING; TUNNEL CURRENTS; TUNNEL PATH; TUNNEL PATHS;

ANALYTICAL MODELS; COMPUTER SIMULATION; DRAIN CURRENT; ELECTRIC FIELDS; MODELS;

FIELD EFFECT TRANSISTORS;

EID: 84857048293     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.10.032     Document Type: Article

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