-
1
-
-
35748974883
-
Nanoionic-based resistive switching memories
-
Waser R, Aono M: Nanoionic-based resistive switching memories. Nat Mater 2007, 6:833-840.
-
(2007)
Nat Mater
, vol.6
, pp. 833-840
-
-
Waser, R.1
Aono, M.2
-
3
-
-
20444372632
-
Nanoscale memory elements based on solid-state electrolytes
-
Kozicki MN, Park M, Mitkova M: Nanoscale memory elements based on solid-state electrolytes. IEEE Trans Nanotechnol 2005, 4:331-338.
-
(2005)
IEEE Trans Nanotechnol
, vol.4
, pp. 331-338
-
-
Kozicki, M.N.1
Park, M.2
Mitkova, M.3
-
4
-
-
34547346804
-
Nonvolatile memory elements based on organic materials
-
Scott JC, Bozano LD: Nonvolatile memory elements based on organic materials. Adv Mater 2007, 19:1452-1463.
-
(2007)
Adv Mater
, vol.19
, pp. 1452-1463
-
-
Scott, J.C.1
Bozano, L.D.2
-
5
-
-
0034682887
-
A [2]catenane-based solid state electronically reconfigurable switch
-
Collier CP, Mattersteig G, Wong EW, Luo Y, Beverly K, Sampaio J, Raymo FM, Stoddart JF, Heath JF: A [2]catenane-based solid state electronically reconfigurable switch. Science 2000, 289:1172-1175.
-
(2000)
Science
, vol.289
, pp. 1172-1175
-
-
Collier, C.P.1
Mattersteig, G.2
Wong, E.W.3
Luo, Y.4
Beverly, K.5
Sampaio, J.6
Raymo, F.M.7
Stoddart, J.F.8
Heath, J.F.9
-
6
-
-
34248380063
-
Chemical modification of the electronic conducting states in polymer nanodevices
-
Zhitenev NB, Sidorenko A, Tennant DM, Cirelli RA: Chemical modification of the electronic conducting states in polymer nanodevices. Nat Nanotechnol 2007, 2:237-242.
-
(2007)
Nat Nanotechnol
, vol.2
, pp. 237-242
-
-
Zhitenev, N.B.1
Sidorenko, A.2
Tennant, D.M.3
Cirelli, R.A.4
-
7
-
-
11944255355
-
Quantized conductance atomic switch
-
Terabe K, Hasegawa T, Nakayama T, Aono M: Quantized conductance atomic switch. Nature 2005, 433:47-50.
-
(2005)
Nature
, vol.433
, pp. 47-50
-
-
Terabe, K.1
Hasegawa, T.2
Nakayama, T.3
Aono, M.4
-
8
-
-
66049144283
-
Resistive non-volatile memory devices
-
Waser R: Resistive non-volatile memory devices. Microelectron Eng 2009, 86:1925-1928.
-
(2009)
Microelectron Eng
, vol.86
, pp. 1925-1928
-
-
Waser, R.1
-
10
-
-
34147108217
-
Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides
-
Nian YB, Strozier J, Wu NJ, Chen X, Ignatiev A: Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Phys Rev Lett 2007, 98:146403.
-
(2007)
Phys Rev Lett
, vol.98
, pp. 146403
-
-
Nian, Y.B.1
Strozier, J.2
Wu, N.J.3
Chen, X.4
Ignatiev, A.5
-
11
-
-
34548683233
-
2 crystals
-
2 crystals. Appl Phys Lett 2007, 91:112101.
-
(2007)
Appl Phys Lett
, vol.91
, pp. 112101
-
-
Jameson, J.R.1
Fukuzumi, Y.2
Wang, Z.3
Griffin, P.4
Tsunoda, K.5
Meijer, G.I.6
Nishi, Y.7
-
14
-
-
43049126833
-
The missing memristor found
-
Strukov DB, Snider GS, Stewart DR, Williams RS: The missing memristor found. Nature 2008, 453:80-83.
-
(2008)
Nature
, vol.453
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Williams, R.S.4
-
15
-
-
46749093701
-
Memristive switching mechanism for metal/oxide/metal nanodevices
-
Yang JJ, Pickett MD, Li XM, Ohlberg DAA, Stewart DR, Williams RS: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat Nanotechnol 2008, 3:429-433.
-
(2008)
Nat Nanotechnol
, vol.3
, pp. 429-433
-
-
Yang, J.J.1
Pickett, M.D.2
Li, X.M.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Williams, R.S.6
-
16
-
-
0033903131
-
"Writing-Reading-Erasing" on tungsten oxide films by the scanning electrochemical microscope (SECM)
-
Turyan I, Krasovec UO, Orel B, Saraidorov T, Reisfeld R, Mandler D: "Writing-Reading-Erasing" on tungsten oxide films by the scanning electrochemical microscope (SECM). Adv Mater 2000, 12:330-333.
-
(2000)
Adv Mater
, vol.12
, pp. 330-333
-
-
Turyan, I.1
Krasovec, U.O.2
Orel, B.3
Saraidorov, T.4
Reisfeld, R.5
Mandler, D.6
-
17
-
-
33749233505
-
Density-functional studies of tungsten trioxide, tungsten bronzes, and related systems
-
Ingham B, Hendy SC, Chong SV, Tallon JL: Density-functional studies of tungsten trioxide, tungsten bronzes, and related systems. Phys Rev B 2005, 72:075109.
-
(2005)
Phys Rev B
, vol.72
, pp. 075109
-
-
Ingham, B.1
Hendy, S.C.2
Chong, S.V.3
Tallon, J.L.4
-
19
-
-
0014795374
-
Effect of oxygen-deficiency on electrical transport properties of tungsten trioxide crystals
-
Berak JM, Sienko MJ: Effect of oxygen-deficiency on electrical transport properties of tungsten trioxide crystals. J Solid State Chem 1970, 2:109-133.
-
(1970)
J Solid State Chem
, vol.2
, pp. 109-133
-
-
Berak, J.M.1
Sienko, M.J.2
-
20
-
-
33748997398
-
A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte
-
Kozicki MN, Gopalan C, Balakrishnan M, Mitkova MA: A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte. IEEE Trans Nanotechnol 2006, 5:535-544.
-
(2006)
IEEE Trans Nanotechnol
, vol.5
, pp. 535-544
-
-
Kozicki, M.N.1
Gopalan, C.2
Balakrishnan, M.3
Mitkova, M.A.4
-
21
-
-
77249144043
-
Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing
-
Shang DS, Shi L, Sun JR, Shen BG, Zhu GF, Li RW, Zhao YG: Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing. Appl Phys Lett 2010, 96:072103.
-
(2010)
Appl Phys Lett
, vol.96
, pp. 072103
-
-
Shang, D.S.1
Shi, L.2
Sun, J.R.3
Shen, B.G.4
Zhu, G.F.5
Li, R.W.6
Zhao, Y.G.7
-
22
-
-
79951822605
-
x resistive memory using a novel selfaligned field enhancement feature with excellent reliability and scalability
-
In, December 6-8 2010; San Francisco, USA. New York: IEEE
-
x resistive memory using a novel selfaligned field enhancement feature with excellent reliability and scalability. In Proceedings of the 2010 International Electron Devices Meeting: December 6-8 2010; San Francisco, USA. New York: IEEE; 2010:440-443.
-
(2010)
Proceedings of the 2010 International Electron Devices Meeting
, pp. 440-443
-
-
Chien, W.C.1
Chen, Y.R.2
Chen, Y.C.3
Chuang, A.T.H.4
Lee, F.M.5
Lin, Y.Y.6
Lai, E.K.7
Shih, Y.K.8
Hsieh, K.Y.9
Lu, C.Y.10
-
23
-
-
79951539608
-
3 nanowire arrays grown directly on transparent conducting oxide coated glass: Synthesis and photoelectrochemical properties
-
3 nanowire arrays grown directly on transparent conducting oxide coated glass: synthesis and photoelectrochemical properties. Nano Lett 2011, 11:203-208.
-
(2011)
Nano Lett
, vol.11
, pp. 203-208
-
-
Su, J.Z.1
Feng, X.J.2
Sloppy, J.D.3
Guo, L.J.4
Grimes, C.A.5
-
24
-
-
70149088060
-
3 nanowire films
-
3 nanowire films. J Phys Chem C 2009, 113:15877-15881.
-
(2009)
J Phys Chem C
, vol.113
, pp. 15877-15881
-
-
Luo, J.Y.1
Deng, S.Z.2
Tao, Y.T.3
Zhao, F.L.4
Zhu, L.F.5
Gong, L.6
Chen, J.7
Xu, N.S.8
-
25
-
-
34247529957
-
3 nanowire films
-
3 nanowire films. Nanotechnol 2007, 18:205701.
-
(2007)
Nanotechnol
, vol.18
, pp. 205701
-
-
Chen, H.J.1
Xu, N.S.2
Deng, S.Z.3
Lu, D.Y.4
Li, Z.L.5
Zhou, J.6
Chen, J.7
-
26
-
-
0037429249
-
Large-scale synthesis of tungsten oxide nanowires with high aspect ratio
-
Li XL, Liu JF, Li YD: Large-scale synthesis of tungsten oxide nanowires with high aspect ratio. Inorg Chem 2003, 42:921-924.
-
(2003)
Inorg Chem
, vol.42
, pp. 921-924
-
-
Li, X.L.1
Liu, J.F.2
Li, Y.D.3
-
27
-
-
0042948502
-
Hysteresis caused by water molecules in carbon nanotube field-effect transistors
-
Kim W, Javey A, Vermesh O, Wang Q, Li YM, Dai HJ: Hysteresis caused by water molecules in carbon nanotube field-effect transistors. Nano Lett 2003, 3:193-198.
-
(2003)
Nano Lett
, vol.3
, pp. 193-198
-
-
Kim, W.1
Javey, A.2
Vermesh, O.3
Wang, Q.4
Li, Y.M.5
Dai, H.J.6
-
28
-
-
84870458595
-
On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration
-
Yang R, Terabe K, Liu G, Tsuruoka T, Hasegawa T, Gimzewski JK, Aono M: On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration. ACS Nano 2012, 6:9515-9521.
-
(2012)
ACS Nano
, vol.6
, pp. 9515-9521
-
-
Yang, R.1
Terabe, K.2
Liu, G.3
Tsuruoka, T.4
Hasegawa, T.5
Gimzewski, J.K.6
Aono, M.7
|