A pH sensor with a double-gate silicon nanowire field-effect transistor

Applied Physics Letters

Volumn 102, Issue 8, 2013, Pages

  Ahn, Jae Hyuk ^a   Kim, Jee Yeon ^a   Seol, Myeong Lok ^a   Baek, David J ^a   Guo, Zheng ^a   Kim, Chang Hoon ^a   Choi, Sung Jin ^b   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC GATES; CURRENT FLOWS; DOUBLE-GATE; GATE OXIDE THICKNESS; GATE VOLTAGES; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS;

PH; SILICON;

PH SENSORS;

EID: 84874819003     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4793655     Document Type: Article

References (18)

1. A. O. Beckman, U.S. patent 2,058,761 (1936).
2. P. Bergveld, IEEE Trans. Biomed. Eng. 17, 70 (1970). 10.1109/TBME.1970. 4502688
3. P. Bergveld, Sens. Actuators, B 88, 1 (2003). 10.1016/S0925-4005(02) 00301-5
4. D. E. Yates, S. Levine, and T. W. Healy, J. Chem. Soc., Faraday Trans. 1 70, 1807 (1974). 10.1039/f19747001807
5. L. Bousse, N. F. de Rooij, and P. Bergveld, IEEE Trans. Electron Devices 30, 1263 (1983). 10.1109/T-ED.1983.21284
6. O. H. Elibol, B. Reddy, Jr., and R. Bashir, Appl. Phys. Lett. 92, 193904 (2008). 10.1063/1.2920776
7. O. Knopfmacher, A. Tarasov, W. Fu, M. Wipf, B. Niesen, M. Calame, and C. Schönenberger, Nano Lett. 10, 2268 (2010). 10.1021/nl100892y
8. H.-J. Jang and W.-J. Cho, Appl. Phys. Lett. 100, 073701 (2012). 10.1063/1.3685497
9. J. Go, P. R. Nair, B. Reddy, Jr., B. Dorvel, R. Bashir, and M. A. Alam, ACS Nano 6, 5972 (2012). 10.1021/nn300874w
10. Y. Chen, X. Wang, S. Erramilli, and P. Mohanty, Appl. Phys. Lett. 89, 223512 (2006). 10.1063/1.2392828
11. Y.-K. Choi, N. Lindert, P. Xuan, S. Tang, D. Ha, E. Anderson, T.-J. King, J. Bokor, and C. Hu, in The 47th IEEE International Electron Device Meeting (IEDM), Washington DC, USA, 2-5 December 2001, pp. 421-424.
12. J.-H. Ahn, S.-J. Choi, J.-W. Han, T. J. Park, S. Y. Lee, and Y.-K. Choi, Nano Lett. 10, 2934 (2010). 10.1021/nl1010965
13. J.-H. Ahn, J.-Y. Kim, K. Choi, D.-I. Moon, C.-H. Kim, M.-L. Seol, T. J. Park, S. Y. Lee, and Y.-K. Choi, IEEE Trans. Electron Devices 59, 2243 (2012). 10.1109/TED.2012.2200105
14. Silvaco Int., ATLAS User's Manual (Santa Clara, California, 2009).
15. M. Masahara, R. Surdeanu, L. Witters, G. Doornbos, V. H. Nguyen, G. Van den bosch, C. Vrancken, K. Devriendt, F. Neuilly, E. Kunnen, M. Jurczak, and S. Biesemans, IEEE Electr. Device Lett. 28, 217 (2007). 10.1109/LED.2007.891303
16. L. Bousse and P. Bergveld, Sens. Actuators, B 6, 65 (1984). 10.1016/0250-6874(84)80028-1
17. S. Choi, I. Park, Z. Hao, H. -Y. N. Holman, and A. P. Pisano, Appl. Phys. A 107, 421 (2012). 10.1007/s00339-011-6754-9
18. S. Jamasb, S. D. Collins, and R. L. Smith, IEEE Trans. Electron Devices 45, 1239 (1998). 10.1109/16.678525