Design and growth optimization by dual ion beam sputtering of ZnO-based high-efficiency multiple quantum well green light emitting diode

Proceedings - Winter Simulation Conference

Volumn , Issue , 2013, Pages 205-208

  Pandey, Sushil Kumar ^a   Pandey, Saurabh Kumar ^a   Mukherjee, Shaibal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY INDORE   (India)

Author keywords

DIBSD; green LED; multiple quantum well; XRD; ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPE (AFM); BAND-EDGE EMISSIONS; C-AXIS ORIENTATIONS; DIBSD; DUAL ION BEAM SPUTTERING; ELECTRICAL RESISTIVITY; FOUR-PROBE; GAS COMPOSITIONS; GREEN LEDS; GREEN LIGHT EMITTING DIODES; GROWTH CONDITIONS; GROWTH OPTIMIZATION; GROWTH PARAMETERS; HALL MEASUREMENTS; HIGH QUALITY; HIGH-EFFICIENCY; IN-DEPTH ANALYSIS; N-TYPE ZNO; OPTICAL CHARACTERIZATION; RMS ROUGHNESS; ROOM TEMPERATURE; SHOULDER PEAKS; SIMULATION SOFTWARE; SUBSTRATE TEMPERATURE; THEORETICAL STUDY; TURN-ON VOLTAGES; XRD; ZNO; ZNO LAYERS;

ATOMIC FORCE MICROSCOPY; COMPUTER SOFTWARE; ELECTRIC CONDUCTIVITY; NANOELECTRONICS; OPTIMIZATION; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84874766584     PISSN: 08917736     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2013.6465999     Document Type: Conference Paper

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