Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

Thin Solid Films

Volumn 518, Issue 22, 2010, Pages 6304-6307

  Kim, Chang Eun ^a   Moon, Pyung ^a   Kim, Sungyeon ^a   Myoung, Jae Min ^a   Jang, Hyeon Woo ^b   Bang, Jungsik ^b   Yun, Ilgu ^a  

^a Yonsei University   (South Korea)

^b LG Chemical Ltd   (South Korea)

Author keywords

Bandgap narrowing; Burstein Moss effect; Carrier concentration; Modified BM equation; ZnO:Ga thin film

Indexed keywords

BAND GAP NARROWING; BAND GAPS; BLUE SHIFT; BURSTEIN; BURSTEIN-MOSS EFFECTS; GA-DOPED ZNO; GLASS SUBSTRATES; HYDROGEN ATMOSPHERE; MODIFIED BM EQUATION; THEORETICAL VALUES; ZNO:GA THIN FILMS;

CONCENTRATION (PROCESS); ENERGY GAP; GALLIUM; GALLIUM ALLOYS; OPTICAL BAND GAPS; OPTICAL FILMS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

CARRIER CONCENTRATION;

EID: 77956058193     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.03.042     Document Type: Conference Paper

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