Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Solid-State Electronics

Volumn 81, Issue , 2013, Pages 72-77

  Shtepliuk, I ^a   Khranovskyy, V ^b   Lashkarev, G ^a   Khomyak, V ^c   Lazorenko, V ^a   Ievtushenko, A ^a   Syvajarvi M ^b   Jokubavicius, V ^b   Yakimova, R ^b  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b LINKÖPING UNIVERSITY   (Sweden)

^c CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Compositional fluctuation; Heterojunction; Photoluminescence; Ternary alloy

Indexed keywords

ACCEPTOR CONCENTRATIONS; AS-GROWN; COMPOSITIONAL FLUCTUATIONS; CURRENT-VOLTAGE MEASUREMENTS; DIODE CHARACTERISTICS; DIRECT CURRENT MAGNETRON SPUTTERING; HOLE INJECTION; LOW TEMPERATURES; N-TYPE LAYERS; P-N JUNCTION; P-TYPE LAYERS; RADIATIVE RECOMBINATION; RECTIFYING CHARACTERISTICS; SERIES RESISTANCES; TURN-ON VOLTAGES; ZNO;

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; PHOTOLUMINESCENCE; SILICON CARBIDE; TERNARY ALLOYS; ZINC COMPOUNDS; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84874732554     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.01.015     Document Type: Article

References (34)

1. G.V. Lashkarev, V.A. Karpyna, V.I. Lazorenko, A.I. Ievtushenko, I.I. Shtepliuk, and V.D. Khranovskyy Properties of zinc oxide at low and moderate temperatures Low Temp Phys 37 2011 226 234
2. V. Khranovskyy, I. Tsiaoussis, G.R. Yazdi, L. Hultman, and R. Yakimova Heteroepitaxial ZnO nanohexagons on p-type SiC J Cryst Growth 312 2010 327 332
3. Y.T. Shih, M.K. Wu, M.J. Chen, Y.C. Cheng, J.R. Yang, and M. Shiojiri ZnO-based heterojunction light-emitting diodes on p-SiC(4H) grown by atomic layer deposition Appl Phys B 98 2010 767 772
4. Y.I. Alivov, D. Johnstone, Ü. Özgür, V. Avrutin, Q. Fan, and S.S. Akarca-Biyikli Electrical and optical properties of n-ZnO/p-SiC heterojunctions Jpn J Appl Phys 44 2005 7281 7284 (Pubitemid 43160512)
5. A. El-Shaer, A. Bakin, E. Schlenker, A.C. Mofor, G. Wagner, and S.A. Reshanov Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates Superlattice Microstruct 42 2007 387 391 (Pubitemid 47380179)
6. F. Fang, D. Zhao, X. Fang, J. Li, Z. Wei, and S. Wang Tunable electroluminescence from n-ZnCdO/p-GaN heterojunction J Phys Chem Solids 73 2012 217 220
7. X. Ma, P. Chen, R. Zhang, and D. Yang Optical properties of sputtered hexagonal CdZnO films with band gap energies from 1.8 to 3.3 eV J Alloys Compd 509 2011 6599 6602
8. xO nanorods with controllable optical properties Electrochem Commun 11 2009 282 285
9. xO solid solution grown on ZnO and different sapphire orientations J Cryst Growth 331 2011 18 24
10. 0.1O films Thin Solid Films 520 2012 4772 4777
11. 0.1O films prepared by DC reactive magnetron sputtering Acta Phys Pol A 120 2012 A61 A65
12. W. Lim, D.P. Norton, S.J. Pearton, X.J. Wang, W.M. Chen, and A. Buyanova Migration and luminescence enhancement effects of deuterium in ZnO/ZnCdO quantum wells Appl Phys Lett 92 2008 032103-3
13. xO-nanorods/p-GaN heterojunction Phys Status Solidi A 209 2012 359 363
14. xO nanowires by electrodeposition for light-emitting diode applications J Phys Chem C 115 2011 14548 14558
15. K. Yamamoto, A. Nakamura, J. Temmyo, E. Muñoz, and A. Hierro Green electroluminescence from ZnCdO multiple quantum-well light-emitting diodes grown by remote-plasma-enhanced metal-organic chemical vapor deposition IEEE Photon Technol Lett 23 2011 1052 1054
16. 5 J Electrochem Soc 111 9 1964 1052 1057
17. F. Bertram, S. Giemsch, D. Forster, J. Christen, R. Kling, and C. Kirchner Direct imaging of phase separation in ZnCdO layers Appl Phys Lett 88 2006 061915-3
18. V. Venkatachalapathy, A. Galeckas, M. Trunk, T. Zhang, A. Azarov, and A.Yu. Kuznetsov Understanding phase separation in ZnCdO by a combination of structural and optical analysis Phys Rev B 83 2011 125315-11
19. A.I. Ievtushenko, G.V. Lashkarev, V.I. Lazorenko, V.A. Karpyna, M.G. Dusheyko, and V.M. Tkach Effect of nitrogen doping on photoresponsivity of ZnO films Phys Status Solidi 207 2010 1746 1750
20. P. Sagar, P.K. Shishodia, R.M. Mehra, H. Okada, A. Wakahara, and A. Yoshida Photoluminescence and absorption in sol-gel-derived ZnO films J Lumin 126 2007 800 806 (Pubitemid 46755315)
21. A.G. Milnes, and D.L. Feucht Heterojunctions and metal-semiconductor junctions 1972 Academic New York
22. R. Ferro, and J.A. Rodríguez Influence of F-doping on the transmittance and electron affinity of CdO thin films suitable for solar cells technology Sol Energy Mater Sol Cells 64 2000 363 370
23. V. Khranovskyy, and Rositza Yakimova Heteroepitaxy of ZnO on SiC as a route toward nanoscale p-n junction Z.C. Feng, Handbook of ZnO and related materials 2012 Taylor & Francis/CRC Press Florida (USA)
24. xO films on the Cd composition Phys Status Solidi A 201 2004 2929 2933 (Pubitemid 40743305)
25. W.F. Yang, R. Chen, B. Liu, G.G. Gurzadyan, L.M. Wong, and S.J. Wang Surface-plasmon enhancement of band gap emission from ZnCdO thin films by gold particles Appl Phys Lett 97 2010 061104-3
26. S.M. Sze Physics of semiconductor devices 1981 Wiley New York
27. M.W. Allen, and S.M. Durbin Influence of oxygen vacancies on Schottky contacts to ZnO Appl Phys Lett 92 2008 122110-122110-3.
28. z interfacial layer Solid State Electron 36 1993 339 344 (Pubitemid 23623842)
29. J.H. Lee, J.Y. Lee, J.J. Kim, H.S. Kim, N.W. Jang, and W.J. Lee Dependence of the diode characteristics of n-ZnO/p-Si (1 1 1) on the Si substrate doping J Korean Chem Soc 56 2010 429 433
30. X. Li, B. Zhang, X. Dong, Y. Zhang, X. Xia, and W. Zhao Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal-organic chemical vapor deposition J Lumin 129 2009 86 89
31. X.D. Chen, C.C. Ling, S. Fung, C.D. Beling, Y.F. Mei, and K.Y. Ricky Current transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and deposition Appl Phys Lett 88 2006 132104-132104-3
32. N. Bano, I. Hussain, O. Nur, M. Willander, and P. Klason Study of radiative defects using current-voltage characteristics in ZnO rods catalytically grown on 4H-p-SiC J Nanomater 2010 2010 1 5
33. S. Nakamura Current status and future prospects of InGaN-based laser diodes JSAP Int 1 2000 5 17
34. S. Nakamura The roles of structural imperfections in InGaN/GaN/AlGaN- based laser diodes grown on GaN substrates with a fundamental transverse mode Science 281 1998 956 961