Tunable electroluminescence from low-threshold voltage LED structure based on electrodeposited Zn 1-xCd xO-nanorods/p-GaN heterojunction

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 2, 2012, Pages 359-363

  Pauporte Th ^a   Lupan, O ^a,b   Viana, B ^c  

^a PSL RESEARCH UNIVERSITY   (France)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^c UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

Author keywords

LEDs; optical materials and properties

Indexed keywords

EMISSION PEAKS; EMISSION THRESHOLD; EMISSION WAVELENGTH; EPITAXIAL ELECTRODEPOSITION; FORWARD BIAS VOLTAGE; LED STRUCTURE; LEDS; LOW TEMPERATURES; LOW THRESHOLDS; OPTICAL MATERIALS AND PROPERTIES; ROOM TEMPERATURE; THERMAL-ANNEALING; ULTRA-VIOLET;

CADMIUM ALLOYS; ELECTRODEPOSITION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HETEROJUNCTIONS; MATERIALS PROPERTIES; NANORODS; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84856241054     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127215     Document Type: Article

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