Migration and luminescence enhancement effects of deuterium in ZnOZnCdO quantum wells

Applied Physics Letters

Volumn 92, Issue 3, 2008, Pages

  Lim, W ^a   Norton, D P ^a   Pearton, S J ^a   Wang, X J ^b   Chen, W M ^b   Buyanova, I A ^b   Osinsky, A ^c   Dong, J W ^c   Hertog, B ^c   Thompson, A V ^d   Schoenfeld, W V ^d   Wang, Y L ^e   Ren, F ^e  

^a University of Florida   (United States)

^b LINKÖPING UNIVERSITY   (Sweden)

^c SVT ASSOCIATES   (United States)

^d UNIVERSITY OF CENTRAL FLORIDA   (United States)

^e UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEUTERIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE;

ANNEALING TEMPERATURES; MIGRATION DEPTHS; NONRADIATIVE CENTERS; PLASMA EXPOSURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 38549179797     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2836946     Document Type: Article

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