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Volumn 520, Issue 14, 2012, Pages 4772-4777

Features of the influence of the deposition power and Ar/O2 gas ratio on the microstructure and optical properties of the Zn 0.9Cd0.1O films

(8) Shtepliuk, I a Lashkarev, G a Khomyak, V b Lytvyn, O c Marianchuk, P b Timofeeva, I a Ievtushenko, A a Lazorenko, V a

a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE (Ukraine)

b CHERNIVTSI NATIONAL UNIVERSITY (Ukraine)

c INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

Author keywords

Bandgap engineering; CdO; Light emitting diodes; Ternary alloys; ZnO films

Indexed keywords

ARGON CONCENTRATION; BAND GAP ENGINEERING; CDO; DEPOSITION POWER; DIRECT CURRENT; FILM MICROSTRUCTURES; GAS CONCENTRATION; GAS RATIO; GROWTH CONDITIONS; GROWTH PARAMETERS; POLYCRYSTALLINE; REACTIVE MAGNETRON SPUTTERING; STRUCTURAL QUALITIES; ZNO FILMS;

ARGON; CADMIUM COMPOUNDS; DC POWER TRANSMISSION; ENERGY GAP; FILM GROWTH; LIGHT EMITTING DIODES; MICROSTRUCTURE; OPTICAL PROPERTIES; SURFACE MORPHOLOGY; TERNARY ALLOYS;

ZINC;

EID: 84860307133 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.10.181 Document Type: Conference Paper

Times cited : (16)

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