Solution based-spin cast processed organic bistable memory device

Solid-State Electronics

Volumn 81, Issue , 2013, Pages 45-50

  Ramana, Ch V V ^a   Moodley, M K ^a   Kannan, V ^b   Maity, A ^c  

^a UNIVERSITY OF KWAZULU NATAL   (South Africa)

^b Dongguk University   (South Korea)

^c DSI CSIR Nanotechnology Innovation Centre   (South Africa)

Author keywords

Organic bistable memory device; Poly 2 methoxy 5 (2 ethyl hexyloxy) 1,4 phenylenevinylene ; Trapping and detrapping of electrons mechanism; ZnO nanoparticle

Indexed keywords

BISTABLE MEMORY; COATED GLASS; DE-TRAPPING; ELECTRICAL CHARACTERIZATION; MEH-PPV; ON/OFF RATIO; ORGANIC BISTABLE MEMORY DEVICES; PERFORMANCE TESTS; PHENYLENEVINYLENE; RAMAN AND FTIR SPECTROSCOPY; SPIN CASTING; STABLE PERFORMANCE; SWITCHING CHARACTERISTICS; SWITCHING MECHANISM; TWO TERMINALS; TWO-TERMINAL DEVICES; ZNO NANOPARTICLES;

FOURIER TRANSFORM INFRARED SPECTROSCOPY; ITO GLASS; METAL NANOPARTICLES; THIN FILMS;

SPIN GLASS;

EID: 84874724133     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.10.011     Document Type: Article

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