Modulation of field emission properties of ZnO nanorods during arc discharge

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 12, 2010, Pages 8239-8243

  Fang, F ^a   Kennedy, J ^a   Carder, D A ^a   Futter, J ^a   Murmu, P ^a   Markwitz, A ^a  

^a GNS SCIENCE   (New Zealand)

Author keywords

Arc discharge; Field emission; Zinc oxide nanorods

Indexed keywords

ARC DISCHARGE; ARC-DISCHARGE METHOD; COLD CATHODE MATERIAL; ELECTRICAL PROPERTY; FIELD EMISSION PROPERTY; HIGH OXYGEN PARTIAL PRESSURE; IMPURITIES IN; ION BEAM ANALYSIS; LOW COSTS; OXYGEN PARTIAL PRESSURE; PROTON INDUCED X-RAY EMISSIONS; SEM; SEM IMAGE; SYNTHESIS ROUTE; TURN-ON FIELD; ZINC OXIDE NANORODS; ZNO; ZNO NANOROD;

COLD CATHODE TUBES; ELECTRIC PROPERTIES; FIELD EMISSION; FIELD EMISSION CATHODES; ION BEAMS; MORPHOLOGY; NANORODS; OXYGEN; PARTIAL PRESSURE; POSITIVE IONS; SCANNING ELECTRON MICROSCOPY; ZINC; ZINC OXIDE;

FIELD EMISSION DISPLAYS;

EID: 79955538680     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.3009     Document Type: Article

References (22)

1. C. J. Park, D. K. Choi, J. Yoo, G. C. Yi, and C. J. Lee, Appl. Phys. Lett. 90, 083107 (2007).
2. Q. Wang, K. Yu, T. H. Wang, and C. L. Lin, Appl. Phys. Lett. 83, 2253 (2003).
3. H. Jin, Y. Li, J. Li, and C. Gu, Microelectron. Eng. 86, 1159 (2009).
4. C. J. Lee, T. J. Lee, S. Lyu, C. Lyu, and Y. Zhang, Appl. Phys. Lett. 81, 3648 (2002).
5. K. Park, Y. Choi, M. Ahn, D. Kim, Y. Sung, J. Park, and K. Choi, J. Nanosci. Nanotechnol. 9, 4328 (2009).
6. K. Huo, J. Fu, H. Ni, Y. Hu, G. Qian, P. K. Chu, and Z. Hu, J. Nanosci. Nanotechnol. 9, 3848 (2009).
7. Q. Zhao, X. Y. Xu, X. F. Song, X. Z. Zhang, D. P. Yu, C. P. Li, and L. Guo, Appl. Phys. Lett. 88, 033102 (2006).
8. C. X. Xu, X. W. Sun, and B. J. Chen, Appl. Phys. Lett. 84, 1540 (2004).
9. J. Xiao, Mater. Chem. Phys. 115, 771 (2009).
10. A. Umar, Y. K. Park, and Y.-B. Hahn, J. Nanosci. Nanotechnol. 9, 2692 (2009).
11. B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Kashiwaba, and K. Haga, Nanotechnology 1, S382 (2004).
12. D. Banerjee, J. Rybczynski, J. Y. Huang, D. Z. Wang, K. Kempa, and Z. F. Ren, Appl. Phys. A 80, 749 (2005).
13. M. Lorenz, E. M. Kaidashev, A. Rahm, T. Nobis, J. Lenzner, G. Wagner, D. Spemann, H. Hochmuth, and M. Grundmann, Appl. Phys. Lett. 86, 143113 (2005).
14. Y. W. Chen and Y. C. Liu, J. Chem. Phys. 12, 134701 (2005).
15. J. J. Wu and S. C. Liu, Phys. Chem. B 106, 9546 (2002).
16. S. Peulon and D. Lincot, Adv. Mater. 8, 166 (1996).
17. S. Chatterjee, S. Gohil, B. Chalke, and P. Ayyub, J. Nanosci. Nanotechnol. 9, 4792 (2009).
18. X. F. Wu, C. X. Xu, G. P. Zhu, and Y. M. Ling, Chin. Phys. Lett. 23, 2165 (2006).
19. G. P. Zhu, C. X. Xu, X. F. Wu, Y. Yang, X. W. Sun, and Y. P. Cui, J. Electronic Materials 36, 494 (2007).
20. F. Fang, J. Futter, A. Markwitz, and J. Kennedy, Nanotechnology 20, 245502 (2009).
21. J. Kennedy, A. Markwitz, B. J. Ruck, S. M. Durbin, and W. Gao, J. Electronic Materials 36, 472 (2007).
22. J. Kennedy, J. Futter, F. Fang, and A. Markwitz, New Zealand Patent Application 576207 (2008).