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Volumn , Issue , 2006, Pages

Stacked low-power field-programmable antifuse memories for RFID on plastic

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY REQUIREMENTS; HIGH-SPEED PROGRAMMING; LOW POWERS; ORGANIC MATERIALS; PLASTIC ELECTRONICS; PROGRAMMABLE MEMORY; RF-ID TAGS;

EID: 46049092225     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346770     Document Type: Conference Paper
Times cited : (7)

References (5)
  • 1
    • 0037491133 scopus 로고    scopus 로고
    • Polycrystalling silicon/CoSi2 Schottky diode with integrated SiO2 antifuse: A nonvolatile memory cell
    • S. Herner, M. Mahajani, M. Konevecki, E. Kuang, S. Radigan, and S. Sunton, "Polycrystalling silicon/CoSi2 Schottky diode with integrated SiO2 antifuse: a nonvolatile memory cell," Appl. Phys. Lett., v. 82, p.4163, 2003.
    • (2003) Appl. Phys. Lett , vol.82 , pp. 4163
    • Herner, S.1    Mahajani, M.2    Konevecki, M.3    Kuang, E.4    Radigan, S.5    Sunton, S.6
  • 3
    • 33747372190 scopus 로고    scopus 로고
    • Performance improvement by charge trapping of doping fluorescent dyes in organic memory devices
    • J. Chen, D. Ma, "Performance improvement by charge trapping of doping fluorescent dyes in organic memory devices," Journ Appl. Phys., v. 100. 034512, 2006.
    • (2006) Journ Appl. Phys , vol.100 , pp. 034512
    • Chen, J.1    Ma, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.