Electrodeposition of In2O3 thin films from a dimethylsulfoxide based electrolytic solution

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 2, 2013, Pages 297-305

  Henriquez R ^a   Munoz E ^a   Dalchiele, E A ^b   Marotti, R E ^b   Martin F ^c   Leinen, D ^c   Ramos Barrado, J R ^c   Gomez H ^a  

^a PONTIFICIA UNIVERSIDAD CATÓLICA DE VALPARAÍSO   (Chile)

^b INSTITUTO DE FÍSICA   (Uruguay)

^c UNIVERSITY OF MÁLAGA   (Spain)

Author keywords

dimethylsulfoxide; electrodeposition; In2O3; thin films

Indexed keywords

AFTER-HEAT TREATMENT; CHEMICAL STATE; COATED GLASS SUBSTRATES; CUBIC STRUCTURE; DIRECT BAND GAP; DONOR DENSITY; ELECTROLYTIC SOLUTION; FLAT BAND POTENTIAL; FLUORINE DOPED TIN OXIDE (FTO); INDIRECT BAND GAP; MOTT-SCHOTTKY PLOTS; N-TYPE CONDUCTIVITY; OPTICAL CHARACTERISTICS; POLYCRYSTALLINE; POTENTIAL CYCLING; PRECURSOR LAYER; SEMICONDUCTOR FILMS; TRANSMITTANCE SPECTRA;

ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; DIMETHYL SULFOXIDE; ELECTRODEPOSITION; ENERGY GAP; HEAT TREATMENT; NANOCOMPOSITES; PHOTOELECTRONS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; TIN OXIDES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM;

EID: 84874078416     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201228534     Document Type: Article

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