Conduction-type control of SnSx films prepared by the sol-gel method for different sulfur contents

Journal of Alloys and Compounds

Volumn 553, Issue , 2013, Pages 208-211

  Huang, Chung Cheng ^a   Lin, Yow Jon ^a   Chuang, Cheng Yu ^a   Liu, Chia Jyi ^a   Yang, Yao Wei ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

Chemical synthesis; Electronic structures; Semiconductors; SnS

Indexed keywords

ATOMIC CONCENTRATION; CHEMICAL SYNTHESIS; CONDUCTION TYPE; EXPERIMENTAL IDENTIFICATION; GROWTH CONDITIONS; LATTICE RELAXATION; SNS; SULFUR CONCENTRATIONS; SULFUR CONTENTS;

ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; SEMICONDUCTOR MATERIALS; SOL-GEL PROCESS; SOL-GELS; SULFUR;

TIN;

EID: 84873880709     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.11.134     Document Type: Article

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