Temperature dependence of current-voltage characteristics of Ag/p-SnS Schottky barrier diodes

Applied Surface Science

Volumn 242, Issue 3-4, 2005, Pages 412-418

  Şahin, Mehmet ^a   Şafak, Haluk ^a   Tuǧluoǧlu, Nihat ^b   Karadeniz, Serdar ^b  

^a SELCUK UNIVERSITY   (Turkey)

^b Ankara Nuclear Research and Training Center   (Turkey)

Author keywords

I V characteristics; IV VI layered semiconductor compounds; Schottky barrier diode

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS; THERMIONIC EMISSION;

BRIDGMAN METHOD; ORTHORHOMBIC STRUCTURES; RICHARDSON PLOT;

SILVER;

EID: 13444310832     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.017     Document Type: Article

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