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Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2473-2476

Thin film preparation and characterization of wide band gap Cu3TaQ4 (Q = S or Se) p-type semiconductors

(7) Newhouse, P F a Hersh, P A a Zakutayev, A a Richard, A a Platt, H A S a Keszler, D A a Tate, J a

a OREGON STATE UNIVERSITY (United States)

Author keywords

Cu3TaS4; Cu3TaSe4; p Type; Photoluminescence; PLD; Semiconductor; Transparent thin film

Indexed keywords

AMORPHOUS FILMS; CRYSTAL ORIENTATION; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ENERGY GAP; FILM PREPARATION; LIGHT EMISSION; LUMINESCENCE; PHOTOLUMINESCENCE; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SOLID SOLUTIONS; SOLIDS; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; VAPOR DEPOSITION; VAPORS; YTTRIA STABILIZED ZIRCONIA; ZIRCONIA;

CU3TAS4; CU3TASE4; P-TYPE; PLD; SEMICONDUCTOR; TRANSPARENT THIN FILM;

COPPER;

EID: 58949103828 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2008.11.020 Document Type: Article

Times cited : (43)

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