ZnS wide band gap semiconductor thin film electronic structure sensitivity to Mn impurity

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 332-334

  Vdovenkova, T ^a   Vdovenkov, A ^b   Tornqvist, R ^c  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^b Research Institute for Microdevices   (Ukraine)

^c Planar Systems Inc Finland   (Finland)

Author keywords

Electronic structure; Impurities; X ray photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; COMPOSITION EFFECTS; CRYSTAL IMPURITIES; ELECTRONIC STRUCTURE; ENERGY GAP; MANGANESE; SEMICONDUCTING ZINC COMPOUNDS; SENSITIVITY ANALYSIS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

BAND BENDING;

SEMICONDUCTING FILMS;

EID: 0032670798     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01596-X     Document Type: Article

References (10)

1. L. Ninisto, Ann. Chim. 87 (1997) 221.
2. C.D. Wagner, L.E. Davis, M.V, Zeller, et al., Surf. Interface Anal. 3 (1981) 211.
3. V.I. Nefedov, X-ray Photoelectron Spectroscopy of Chemical Compounds (in Russian), Chimija, Moscow, 1984 pp. 165, 190.
4. E. Buzaneva, T. Vdovenkova, A. Gorchinsky, A. Senkevich, V. Nemoshkalenko, A. Klein, Y. Tomm, J. Elec. Spec. Rel. Phenom. 68 (1994) 763.
5. M.P. Seah, W.A. Dench, Surf. Interface Anal. 1 (1979) 2.
6. R.J. Cole, P. Weightman, J. Phys. Condens. Matter. 6 (1994) 5783.
7. P. Weightman, Microsc. Microanal. Microstruct. 6 (1995) 263.
8. D. Briggs, J.C. Riviere, in: D. Briggs, M.P. Seach (Eds.), Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy (in Russian), Mir, Moscow, 1987, pp. 133 .
9. K. Seigbahn, C. Nordling, A. Fahlman, et al., ESCA, Atomic, molecular and Solid State Structure Studied by Means of Electron Spectroscopy (in Russian) , Mir, Moscow, 1971 p. 1789.
10. R. Weissmann, K. Muller, Surf. Sci. Rep. 1 (1981) 251.