Effect of substrate to filament distance on formation and photoluminescence properties of indium catalyzed silicon nanowires using hot-wire chemical vapor deposition

Thin Solid Films

Volumn 529, Issue , 2013, Pages 153-158

  Chong, Su Kong ^a   Goh, Boon Tong ^a   Dee, Chang Fu ^b   Rahman, Saadah Abdul ^a  

^a UNIVERSITY OF MALAYA   (Malaysia)

^b INSTITUTE OF MICROENGINEERING AND NANOELECTRONICS IMEN   (Malaysia)

Author keywords

Hot wire chemical vapor deposition; Indium; Photoluminescence; Silicon nanowires

Indexed keywords

BASE WALL; CATALYTIC GROWTH; CRYSTALLINITIES; DIFFERENT SUBSTRATES; GROWTH SITES; HOT WIRE CHEMICAL VAPOR DEPOSITION; NANO-CONES; OUTER LAYER; PHOTOLUMINESCENCE PROPERTIES; RADIAL GROWTH; RED PHOTOLUMINESCENCE; SI NANO-CRYSTALLITES; SI NANOWIRE; SILICON NANOWIRES;

CHEMICAL VAPOR DEPOSITION; INDIUM; NANOWIRES; PHOTOLUMINESCENCE; VAPORS; WIRE;

SILICON;

EID: 84873736051     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.07.098     Document Type: Conference Paper

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