Erratum: Interfaces and composition profiles in metal-sulfide nanolayers synthesized by atomic layer deposition (Chemistry of Materials (2013) 25:3 (313-319) DOI: 10.1021/cm3027225);Interfaces and composition profiles in metal-sulfide nanolayers synthesized by atomic layer deposition

Chemistry of Materials

Volumn 25, Issue 3, 2013, Pages 313-319

  Thimsen, Elijah ^a   Baryshev, Sergey V ^a   Martinson, Alex B F ^a   Elam, Jeffrey W ^a   Veryovkin, Igor V ^a   Pellin, Michael J ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

chemical vapor deposition; gentle dual beam; high resolution depth profile; kesterite; low energy sputtering; mesoscopic; metal sulfide; nanostructure; SARISA; secondary ion mass spectrometry

Indexed keywords

ANNEALING; ATOMS; CHEMICAL VAPOR DEPOSITION; COPPER ALLOYS; FILM PREPARATION; II-VI SEMICONDUCTORS; INTERFACES (MATERIALS); METALS; MIXING; MULTILAYER FILMS; MULTILAYERS; NANOSTRUCTURES; ORGANIC POLYMERS; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; STRUCTURE (COMPOSITION); SULFUR COMPOUNDS; TIN ALLOYS; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

DUAL BEAM; HIGH-RESOLUTION DEPTH; KESTERITES; LOW ENERGY SPUTTERING; MESOSCOPICS; METAL SULFIDES; SARISA;

ATOMIC LAYER DEPOSITION;

EID: 84873618932     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm500491q     Document Type: Erratum

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